Far-infrared s ̃p interexciton transitions in InGaAs/GaAs coupled double quantum wells
نویسندگان
چکیده
We consider s→p interexciton far-infrared ~FIR! magnetooptical transitions in coupled double quantum wells ~DQWs!. Spatially direct ~intrawell! and indirect ~interwell! excitons in strained InxGa12xAs/GaAs symmetric DQWs with a simple valence band are considered. The evolution of the transition energies and oscillator strengths as functions of the transverse magnetic field B in different regimes is studied: we consider the direct regime ~zero and low transverse electric field E!, the indirect regime ~high E!, and the indirect– direct crossover ~induced by increasing B at intermediate E!. © 1996 American Institute of Physics. @S0021-3640~96!01515-0#
منابع مشابه
Intraband transitions in magnetoexcitons in coupled double quantum wells
A theory of far-infrared ~FIR! magneto-optical intraband s→p transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained InxGa12xAs/GaAs quantum wells with nondegenerate valence band in the regime of both narrow and wide barriers has been analyzed. The energies and dipole matrix elements of transitions between the ...
متن کاملMid/far-infrared photodetectors based on quantum coherence in coupled quantum wells
We propose mid/far-infrared photodetectors based on coherent sum-frequency generation in a near-resonant cascade of interband and intersubband transitions in high optical nonlinearity asymmetric quantum well structures. Such structures can yield high detectivity and responsivity in the bandwidth of the order of 30% of a central frequency in the mid-infrared range. Resonant up-conversion detecto...
متن کاملlntersubband transitions in pseudomorphic lnGaAs/GaAs/ AIGaAs multiple step quantum wells
Intersubband transitions from the ground state to the first and second excited states in pseudomorphic AlGaAs/lnGaAs/GaAs/ AlGaAs multiple step quantum wells have been observed. The step well structure has a configuration of two A1GaAs barriers confining an InGaAs/GaAs step. Multiple step wells were grown on GaAs substrate with each InGaAs layer compressively strained. During the growth, a unif...
متن کاملDemonstration of a bias tunable quantum dots-in-a-well focal plane array
Infrared detectors based on quantum wells and quantum dots have attracted a lot of attention in the past few years. Our previous research has reported on the development of the first generation of quantum dots-in-a-well (DWELL) focal plane arrays, which are based on InAs quantum dots embedded in an InGaAs well having GaAs barriers. This focal plane array has successfully generated a two-color i...
متن کاملThe Effect of Exchange-Correlation Holes on the Temperature Dependent Dynamic Dielectric Function of Single-Layer Quantum Wells and Coupled Nanolayers
In this paper, for the first time we have studied theoretically the effect of exchange-correlation holes around electrons in GaAlAs/GaAs/GaAlAs nanostructure on the temperature-dependent dynamic dielectric function of two-dimensional electron gas by employing random phase, STLS and Hubbard approximations. Also, we have investigated another interesting system which is coupled quantum wells struc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1996